三重野文健　工学博士　　　Fumitake Mieno Ph.D.

Experience:

Aug.2015 to present, CEO, Global Research & Innovative Solutions Co. Ltd.

May 2014 to April 2015, Technical Vice President, DaiNippon Screen Electronics (Shanghai) Co., Ltd.

December 2004 to March 2010, Vice President, Board member of TSES (Toppan SMIC Electronics (Shanghai) Co. Ltd.).

April 2008 to April. 2014, Senior Technical Director/Distinguished member of technical staff, TD,SMIC.

Nov.2002 to October 2008, Senior Technical Director, Advanced Technology Division, Memory Technology Development center, SMIC.

April 2001 to October 2002, Project Manager and clean room committee chairman. Fujitsu Ltd., Electron device business unit.

December 1993 until March 2001. Manager of Fujitsu Ltd., Electron device business unit, Iwate plant, manufacturing engineering department

April 1981 until December 1993. Pretreatment and Epitaxy development group leader of Fujitsu Ltd., Electron device business unit, advanced technology development division.

 

Academic records:

-ISSM international paper committee member from 2004.

-Kyoto Prize nominator.

-51 technical Papers and proceedings.

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- 643 patents  Still increasing. 

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- IEEE EDS Member.  

-CBA(Certificate of Business Administration) from Grobis Management School.

 

Achievements:

Process developments and Path findings

At SMIC, conducted DRAM with ALD Al2O3 high aspect ratio capacitor development project and succeeded first in china. The members were around 40 with process integration and process modules of different nations and languages of English, Chinese, Korean and Japanese. Under the condition of un-cooked cross cultural atmosphere with different skilled engineers, succeeded with conducting the problem identification and solution defining through interaction with each organizations with cross-functional and educational minds.

 

In Chengdu SMIC, leading process integration and process engineer team for development of power IC manufacturing.  0.35UMOS power device Avalanche issue solved with junior engineers and studied IGBT.

Recently, heading 14nm path findings and obtained clear path to finFET. Researched architectures on 14nm, 20nm, 28nm, and HKMG, SMT, Low-k sidewall, Contact after silicide, SAC, SADP, etc.. Achieved finFET Initial process flow and tool set setting with reverse engineering analysis and creative mind. Created finFET patents 100+.                                               

 

At Fujitsu, developed high voltage device with thick polysilicon as substrate and V groove isolation for NTT. Developed high speed deposition epitaxial process for high voltage device with pancake type reactor.

 

Developed Si2H6 low temperature epitaxy technology, amorphous poly (Thermal Amorphous Silicon), ClF3 chamber insitu-cleaning technology were invented and developed successfully. These became industry standardized technologies. Reported at IEDM, ECS, etc. Developed brush scrubber technology with an equipment vendor and implemented in manufacturing lines. Solved complicated molecular contamination issues using analytical, logical approaches and reported in a book entitled “Molecular contaminations in ULSI manufacturing. Realize publishing, co. ltd. ”The book is still contributing semiconductor industries. In DRAM process, conducted direct development at manufacturing line for the first time in Fujitsu, succeeded half development period of as previous cases with well communication, and supporting mind. 

 

Wet treatment, Manufacturing technology, Yield improvement technology

 For high yield, wet treatment always key process. Successfully co-development spin scrubber with vendors also wet treatment process and tools optimization with modification.  

 Evaluated and implemented YMS (Yield Management System), DMS (Defect Management System), defect inspection tools to lines and standardized. Conducted and standardized technologies/products transfer to production lines with YMS/DMS data at pilot/development line. This method achieved defect level setting and high yield for early stage of production.

Advanced technology research, Patent strategy/patent creation

 At Fujitsu, 100 more patents submission and still alive 19 patents in Japan, 10 patents in US that are useful for the defense even 8 years past from my leaving. At SMIC 300 more patents submission and recent consecutive three years, top in SMIC.

 At SMIC, providing research results on leading companies advanced technology node, such as 28nm, 20nm, 14nm, 10nm road map and revealed process steps in point of view from middle/long range development planning. Conducting companywide patent creation activities. Investigating and evaluating on Licenser’s technology by discussion with licenser’s engineers on technical matters.

Technology transfer

At Fujitsu, conducted process technologies transfer projects to US and to China. To US technology transfer concentrated on the technology specifications. To China concentrated on the cultural philosophy difference, for example, “considering with running” and “considering before running” and on training to young Chinese engineers.

At SMIC, supported and trained young Chengdu engineers at Elpida Hiroshima line transfer project. Provided support and advice with information exchange/sharing to related supporting Shanghai staff for efficient work of total 80 engineers. After joined the project, the first equipment could installed within 3 month in Chengdu. In addition, at technology transfer, conducted and located 20 process integration and modules engineers at Hiroshima. The engineer’s skills were different a lot. Gave them strong support to success also acted as a technical translator.      

 

Marketing sales support

At SMIC, information exchange/sharing with marketing sales team based on the technical discussion with (potential) customer’s engineers, such as Toshiba Flash and CIS technical trend, Fujitsu FCRAM technical trend and Nikon imagers. In addition, proposed 0.13um DRAM development and TSES establishment.

 

Global management, cross-functional and cross-cultural experience

SMIC is biggest foundry in china and CEO was Chinese American. Obtained CEO’s direct instructions for 8 years. The nations are from china, US, Singapore, Korea, Europe and Japan. And, populations are as in the order. Japanese population is very small. Normally operations are in English and Chinese languages. Under the condition, established new joint venture company TSES from planning bases with a Japanese company. Concentrated on making cross-cultural environment and teamwork of around 50 project members at first step. Succeeded establishment of TSES and production start on schedule. TSES make profit with supporting customer’s growth. In addition, managed technology development team of 120 engineers and succeeded highly achievement of objectives. Concentrated hearing voices, discussion and documentation.

 

Paper:

Selective growth of polysilicon.

F.Mieno, T.Nishizawa, Y.Furumura, M.Maeda, and T.Takagi.

P404, Proceedings of ECS spring meeting, Toronto, (1985).

 

Epitaxial SiC emitter for high speed bipolar VLSIs.

T.Sugii, T.Ito, Y.Furumura, M.Doki, F.Mieno, and M.Maeda.

P45, Digest of technical papers. Symposium on VLSI technology, (1986).

 

Low pressure silicon epitaxy using Si2H6.

F.Mieno, Y.Furumura, M.Maeda.

P49, Extended abstracts of the 18th conference on solid-state devices and materials, Tokyo, 49 (1986).

 

Y.Furumura, F.Mieno, T.Nishizawa, and M.Maeda.

Selective growth of polysilicon.

P379, J.Electrochem.Soc., Feb. (1986).

 

F.Mieno, S.Nakamura, T.Deguchi, M.Maeda, and K. Inayoshi.

Low temperature Silicon epitaxy using Si2H6.

P2320, J. Electrochem. Soc., vol.134, No.9, (1987).

 

F.Mieno, Y.Furumura, and M.Maeda.

Low temperature epitaxy using Si2H6.

P374, Proceedings of joint general session, ECS spring meeting, Philadelphia, (1987). 

 

F.Mieno, Y.Furumura, T.Nishizawa, and M.Maeda.

Selective doped polysilicon growth.

P2862, J.Elecrochem.Soc., vol.134, No.11, (1987)

 

F.Mieno, A.shimizu, S.Nakamura, T.Deguchi, N.Haga, I..Matsumoto, Y.Furumura, T.Yamauchi, K.Inayoshi, M.Maeda, and K.Yanagida.

Novel selective poly- and epitaxial-silicon growth (SPEG) technique for ULSI processing.

IEDM, (1987).

 

T.Deguchi, F.Mieno, N.Haga, S.Nakamura, A.Shimizu, T.Miyake, T.Yamauchi, T.Takada, and K.Inayoshi.

Advanced bipolar process using selective poly- and epitaxial-Si (SPEG) technique.

IEDM, (1987).

 

Y.Furumura, M.Doki, F.Mieno, T.Eshita, T.Suzuki, and M.Maeda.

Hereoepitaxial β-SiC on Si.

P1255, J. Electrochem. Soc., vol. 135, No.5, (1988).

 

T.Sugii, T.Ito, Y.Furumura, M.Doki, F.Mieno, and M.Maeda.

β-SiC/Si heterojunction bipolar transistors with high current gain.

P87, IEEE, Electron device letters, col.9, No.2, (1988).

 

F.Mieno, T.Deguchi, T.Nakazawa, S.Nakamura, Y.Furumura, K.Wada, K.Inayoshi, and K.Yanagida.

SPEG (Selective Poly- and Epitaxial- Silicon Growth) technique for EBT (Epitaxial Base Transistor). P279, Proceedings of ULSI symposium, ECS spring meeting, (1989).

 

F.Mieno, Y.Furumura, and K. Wada.

Low temperature Si epitaxy using Si2H6. (Invited)

(Session Chairman: M.L.Green, ATT Bell Laboratories)

119th TMS Annual meeting & exhibit, Anaheim, California, Feb. 18-22, (1990).

 

H.Miyata, A.Tsukune, F.Mieno, Y.Furumura, and H.Tsuchikawa.

Novel dry cleaning using Si3H8 with the new single-wafer reactor.

Extended abstracts of the 22nd conference on solid state devices and materials. P1161, (1990)

 

F.Mieno, H.Miyata, A.Tsukune, Y.Furumura, H.Tsuchikawa.

Novel dry cleaning using trisilane with a new single-wafer reactor.

IEDM, (1990).

 

F.Mieno and Y.Furumura.

Low-temperature epitaxy using Si2H6.

P1095, J. Electronic Materials, Vol.19, No.10, (1990).

 

F.Mieno, T.Sasaki, H.Miyata, H.Nomura, A.Tsukune, and Y.Furumura.

Thermally deposited amorphous silicon (TAS) and annealing.

Proceedings of Thin film transistor technology symposium, ECS meeting, Toronto, (1992).

 

F.Mieno, T.S. Sukegawa, J.Iizuka, H.Miyata, H.Nomura, A.Tsukune, and Y. Furumura.

Thermally Deposited Amorphous Silicon.

P2166, J. Electrochem. Soc., Vol.141, No.8, (1994).

 

 

F.Mieno, A.Tukune, H.Miyata, A.Shimizu, and Y. Furumura.

Spontaneous polysilicon and epitaxial silicon doposition.

P.1590, J. Electrochem. Soc., Vol.142, No.5, (1995).

 

N.Tokunaga, S.Okamura, S.Sasaki, S.Nakamura, and F.Mieno

Particle count and analysis by using a cyclone particle sampler.

P175, International Symposium on Semiconductor Manufacturing, (1995).

 

F.Mieno, T.Sato, Y.Shibuya, K.Odagiri, H.Tshda, and Riishiro Take.

Yield improvement using data mining system.

P391, International Symposium on Semiconductor Manufacturing. (1999).

 

 

T.Obara, J.Tanakadate, T.Chabata, K.Ishihara, F.Mieno, and F.Yanagihara.

Improving semiconductor manufacturing yields by using raman spectroscopic analysis.

P273, International Symposium on Semiconductor Manufacturing. (2000).

 

D.Yang, H.Kim, J.Ji, and F.Mieno

Novel deep SAC process Technology fo advanced FCRAM.

P145, International Symposium on Semiconductor Manufacturing. (2006).

 

C.I. Choi, Hans Sui, Rice Ma, T. Lu, J.Ji, and F.Mieno.

Yield enhancement/productivity improvement for sub-110nm memory lithography using new alignment strategy.

P381, International symposium on Semiconductor manufacturing, (2006).

 

Ci Choi, Qiu Miller, W.Li, H.Sui, and F.Mieno

Implementation of double pattering lithography process using limited illumination systems.

P1, International symposium on Semiconductor manufacturing, (2007).

 

M.Yang, H.Kim, and F.Mieno

 ArF photoresist etching behavior evaluation.

P1, International symposium on Semiconductor manufacturing, (2007).

 

F.Mieno  

Low pressure Si2H6 epitaxy-1

Spring meeting, , Japan Society of Applied Physics  P537, 1986.  2-Q-4.

 

F.Mieno   

Low pressure Si2H6 epitaxy-2

Fall meeting, , Japan Society of Applied Physics P496, 1986. 28p-N-12.

 

F.Mieno   Low pressure Si2H6 epitaxy-3

Fall meeting, , Japan Society of Applied Physics P584, 1987  31p-C-7.

 

F.Mieno   Low pressure Si2H6 epitaxy-4

 

Falll meeting, , Japan Society of Applied Physics P584, 1987  31p-C-8

 

N.Haga, F.Mieno, Low pressure Si2H6 epitaxy-5

Spring meeting, , Japan Society of Applied Physics P674, 1988, 31a-L-6.

 

F.Mieno, Low pressure Si2H6 epitaxy-6

Spring meeting, , Japan Society of Applied Physics P675, 1988, 31a-L-7.

 

F.Mieno, Low pressure Si2H6 epitaxy-7

Fall meeting, , Japan Society of Applied Physics 1988.

 

F.Mieno, Low pressure Si2H6 epitaxy-8

Spring meeting, , Japan Society of Applied Physics 1989.

 

H.Miyata, F.Mieno, A.Tsukune, Y.Furumura, H.Tsuchikawa

Low pressure Si2H6 epitaxy-9,

 Fall meeting, Japan Society of Applied Physics 1990.

 

F.Mieno, A.Tsukune, H.Miyata, T.Nakazawa, Y. Furumura.　

Low temperature low pressure silicon epitaxy (1)

Fall meeting, Japan Society of Appiled Physics 1989. P549, 27a-C-7.

 

Tsukune, F.Mieno, H.Miyata, T.Nakazawa, Y.Furumura,

Low temperature low pressure silicon epitaxy (2)

Fall meeting, Japan Society of Applied Physics 1989. P549, 27a-C-8.

 

A.Tsukune, H.Miyata, F.Mieno, A.Shimizu, Y.Furumura,

Low temperature epitaxy using high flow Hydrogen.

Fall meeting, Japan Society of Applied Physics 1991.

 

F.Mieno, H.Miyata, A.Tsukune, Y.Furumura,

A new concept CVD reactor for in-situ doped TAS (Thermally deposited A-Si).

Spring meeting, Japan Society of Applied Physics 1992, 28p-ZK-3.

 

M.Kuramae, F.Mieno, H.Ohta, H.Nomura, O.Hataishi, Y.Furumura,

SiO2 film deposition from SixHy/N2O gas system using a single wafer reactor.

Japan Society of Applied Physics Spring meeting,1993 P797,. 1a-ZV-4.

 

N.Setoguchi, F.Mieno, A.Shimizu, K.Tokunou, A.Tsukune, K.Watanabe, Y.Furumura, Low-temperature H2 pre-treatment using a rapid thermal annealing.

Spring meeting, 1993, P625, 29a-ZS-9.

 

T.Nakazawa T.Eshita, F.Mieno, Y.Furumura, M.Maeda, K.Yanagida,

Thermally deposited amorphous silicon-1.

Ext4ended abstracts, fall meeting, 1987, Japan Society of Applied Physics, 19p-Q-4, 579.

 

F.Mieno, T.Nakazawa, A.Shimizu, T.Hara, Y.Katagiri, Y.Furumura, K.Wada, Y.Yanagida, Thermally deposited amorphous silicon-2

Spring meeting, Japan Society of Applied Physics, 1989, 10-ZF-1, P635.

 

F.Mieno, T.Sasaki, J.Iizuka, A.Shimizu, Y.Katagiri, Kikuchi, Yoshida, Y.Furumura, Thermally deposited amorphous silicon-3

Spring meeting, Japan Society of Applied Physics, 1990, P644, 30a-ZF-3,.

 

J.Iizuka, F.Mieno, T.Sasaki, A.Shimizu, Y.Katagiri, Kikuchi, Yoshida, Y.Furumura, Thermally deposited amorphous silicon-4

Spring meeting, Japan Society of Applied Physics, 1990, P645, 30a-ZF-4.

.

F.Mieno, T.Sasaki, J.Iizuka, A.Shimizu, Y.Katagiri, Kikuchi, Yoshida, Y.Furumura, Thermally deposited amorphous silicon-5

Spring meeting, Japan Society of Applied Physics, 1990, P645, 30a-ZF-5.

 

T.Eshita, T.Suzuki, F.Mieno, M.Toki, Y.Furumura, M.Maeda, K.Wada, K.Sugii, T.Itoh, Low temperature SiC epitaxy.

The Institute of Electrical Engineers of Japan 1988.

 

F.Mieno, A.Shimizu, K.Kurita, Y.Furumura,T.Takada,H.Tsuchikawa,T.Ono.

Ragged Polysilicon growth

Fall meeting, Japan Society of Applied Physics, 1990, P693, 29p-E-13.

 

M.Toki, F.Mieno, Y.Furumura, M.Maeda,

Low pressure β-SiC growth (1)　　　

Fall meeting, Japan Society of Applied Physics, 1985, P686.

 

T.Sato, K.Ishikawa, T.Chabata, F.Mieno,

LAD effect on epitaxial wafer.

Fall meeting, , Japan Society of Applied Physics, 1998.